JPH0142510B2 - - Google Patents

Info

Publication number
JPH0142510B2
JPH0142510B2 JP57075947A JP7594782A JPH0142510B2 JP H0142510 B2 JPH0142510 B2 JP H0142510B2 JP 57075947 A JP57075947 A JP 57075947A JP 7594782 A JP7594782 A JP 7594782A JP H0142510 B2 JPH0142510 B2 JP H0142510B2
Authority
JP
Japan
Prior art keywords
thyristor
emitter
mis
base layer
semiconductor region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57075947A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57193059A (en
Inventor
Shupenke Eeberuharuto
Shutoia Furantsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS57193059A publication Critical patent/JPS57193059A/ja
Publication of JPH0142510B2 publication Critical patent/JPH0142510B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H10D18/65—Gate-turn-off devices  with turn-off by field effect 
    • H10D18/655—Gate-turn-off devices  with turn-off by field effect  produced by insulated gate structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/138—Thyristors having built-in components the built-in components being FETs

Landscapes

  • Thyristors (AREA)
JP57075947A 1981-05-08 1982-05-06 Thyristor Granted JPS57193059A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19813118347 DE3118347A1 (de) 1981-05-08 1981-05-08 Thyristor mit gategesteuerten mis-fet-strukturen des verarmungstyps und verfahren zu seinem betrieb

Publications (2)

Publication Number Publication Date
JPS57193059A JPS57193059A (en) 1982-11-27
JPH0142510B2 true JPH0142510B2 (en]) 1989-09-13

Family

ID=6131827

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57075947A Granted JPS57193059A (en) 1981-05-08 1982-05-06 Thyristor

Country Status (2)

Country Link
JP (1) JPS57193059A (en])
DE (1) DE3118347A1 (en])

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6970494B1 (en) 1999-01-27 2005-11-29 Teem Photonics, S.A. Rare-earth doped phosphate-glass lasers and associated methods

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3230741A1 (de) * 1982-08-18 1984-02-23 Siemens AG, 1000 Berlin und 8000 München Halbleiterschalter mit einem abschaltbaren thyristor
DE3447220A1 (de) * 1983-12-30 1985-07-11 General Electric Co., Schenectady, N.Y. Thyristor mit abschaltvermoegen mit verbessertem emitter-bereich und verfahren zu seiner herstellung
FR2568724A1 (fr) * 1984-08-03 1986-02-07 Centre Nat Rech Scient Composant semi-conducteur de puissance a tension de claquage elevee
JPS6188563A (ja) * 1984-10-08 1986-05-06 Toshiba Corp 半導体スイツチ
JPS61125173A (ja) * 1984-11-22 1986-06-12 Meidensha Electric Mfg Co Ltd ゲ−トタ−ンオフサイリスタ
EP0280536B1 (en) * 1987-02-26 1997-05-28 Kabushiki Kaisha Toshiba Turn-on driving technique for insulated gate thyristor

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL293292A (en]) * 1962-06-11
SE392783B (sv) * 1975-06-19 1977-04-18 Asea Ab Halvledaranordning innefattande en tyristor och en felteffekttransistordel
JPS5933986B2 (ja) * 1975-09-12 1984-08-20 三菱電機株式会社 半導体装置
DE2825794C2 (de) * 1978-06-13 1986-03-20 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Abschaltbarer Thyristor
DE2945324A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Thyristor mit verbessertem schaltverhalten

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6970494B1 (en) 1999-01-27 2005-11-29 Teem Photonics, S.A. Rare-earth doped phosphate-glass lasers and associated methods

Also Published As

Publication number Publication date
DE3118347C2 (en]) 1990-02-01
JPS57193059A (en) 1982-11-27
DE3118347A1 (de) 1982-11-25

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